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|
Sr. No. |
Item |
Description |
|
1 |
Company Name |
SK Inc. materials |
|
2 |
Website |
www.sk-materials.com |
|
3 |
Established Date |
1982 |
|
4 |
Headquartered |
Seoul |
|
5 |
Market Position/ History |
Established in 1982, SK Inc. is a material technology company, offering various solution including high purity etching gases. This portfolio includes monofluoromethane (CH 3 F), hexafluorobutadiene (C 4 F 6), and difluoromethane (CH 2 F 2). Started development of semiconductor wafer and SIC abrasives in 1994. Merger of SK Materials took place in 2021. |
|
6 |
Sales Area |
Worldwide |
|
7 |
Manufacturing Location |
China, Japan and Taiwan |
|
8 |
Ticker |
KRX: 034730 |
|
9 |
No. of Employees |
1,606 people (as of December 31, 2022) |
|
10 |
Competitors |
|
|
11 |
CEO |
Kim Yang-taek |
|
12 |
Ownership Type |
Public |
|
13 |
Contact Information |
(03159) 22nd floor, Tower 1, Gran Seoul Building, Jongno 33, Jongno-gu, Seoul TEL02-728-0910 FAX02-728-0998 |
SK Inc. is a materials technology company offering vaarious solutions in gases segment including cleaning gas, deposition gas, industrial gas, etching gas, battery material and mutiple other verticals. The company has been stably supplying highest quality gases solutions to their customers through independent technology development and preemptive investment in expansion.
The Etching gas segment comprises of :
The company operates with multiple subsidiary enterprises which includes:
|
Product |
Product Description |
|
Hexafluoroethane C 2 F 6 |
Application: Used for etching semiconductor micropatterns. |
|
Carbon tetrafluoride C F 4 |
Application: Used for etching oxide films. |
|
Octafluorocyclobutane C 4 F 8 |
Application: Provides high selectivity to mask and is used for 3D NAND high aspect ratio etch. |
|
Pentafluoroethane C 2 HF 5 |
Application: Used for etching oxide and nitride films. |
|
monofluoromethane CH3F |
Application: CH 3 F is a gas used to etch the nitride film of 3D NAND Flash, and its usage is increasing as 3D NAND spreads. |
|
Butadiene hexafluoride C 4 F 6 |
Application: C 4 F 6 is also used for micro-etching the oxide film of increasingly finer DRAM and oxide film etching of 3D NAND Flash |
|
difluoromethane CH 2 F 2 |
Application: CH 2 F 2 is a gas used together with CH 3 F to etch the nitride film of NAND Flash. |
|
Trifluoromethane CHF 3 |
Application: CHF 3 is used for 3D NAND Flash nitride film etching and DRAM nitride film micro-etching. |
|
hydrogen bromenide HBr |
Application: HBr is a gas used in semiconductor etching processes. Due to its excellent precision/vertical etching capabilities |
|
Year |
Latest News |
|
29th June 2022 |
MoU to start cooperative work in high purity gases Showa Denko K.K. and SK Incorporated concluded a memorandum of understanding (MOU) to give consideration to a plan to start cooperative work to produce high-purity gases, which are used in semiconductor production processes, in North America. In 2017, SDK and SK Materials established a joint corporation named SK Showa Denko, Co., Ltd. which produces and sells high-purity gases for semiconductors, and, in the Republic of Korea, they cooperatively produce CH3F, which is used mainly as etching gas for silicon nitride film. |
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